features low cost diffus ed junction low leakage low forward voltage drop high current capability mechanical data case: jedec do-27,molded plastic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.041 ounces,1.15 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. s i ngle p h a s e , half w a v e , 5 0 h z , r e s i s t i v e or i n d u c t i v e l o ad. f o r c a p a c i t i v e l o a d , d e r a t e by 20 % . byv28 -50 byv28 -150 byv28 -200 byv28 -300 byv28 -400 byv28 -600 units maximum recurrent peak reverse voltage v r r m 50 1 5 0 2 0 0 3 0 0 4 0 0 6 0 0 v max imum rms v oltage v rms 35 105 140 210 280 420 v max imum dc bloc king v oltage v dc 50 150 200 300 400 600 v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ i f =i f ( av ) v f 1.25 v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg 5.0 1.05 1.02 100 3.5 3.0 byv28-50 (z) - - - byv28-600 (z) s u pe r f a s t r e c t i f i e r s v o l t a g e r a n g e : 5 0 --- 60 0 v current: 3.5, 3.0 a 3. thermal resistance f rom junction to ambient. a 90.0 i r i fsm note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 100.0 a - 55 ----- + 150 2. measured at 1.0mhz and applied rev erse v oltage of 4.1v dc. do - 2 7 a easily cleaned with alcohol,isopropanol and s im ilar s olvents 70 100 maximum ratings and electrical characteristics byv28 -100 - 55 ----- + 150 i f(av) 25 50 75 100 dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes ambient temperature, average forward current instantaneous forward current fi g. 5-- peak forword surge current reverse voltage, volts peakforwordsurgecurrent junction capacitance, pf amperes number of cycles at 60h z b yv 2 8 - 5 0 (z) - b yv 2 8 - 6 0 0 (z) fi g. 1 -- test ci rcui t di agram and reverse recovery ti me characteri sti c instantaneous forward voltage, volts fi g. 4 -- typi cal juncti on capaci tance s e t t i m e b a s e f o r 1 0 n s / c m notes:1.rise time = 7ns max.input impedance =1m . 22pf. jjjj 2.rise time =10ns max.so urce impedance=50 . fi g. 2 -- typi cal forward characteri sti c fi g. 3 -- forward derati ng curve pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 25vdc (approx) (-) -1.0a - 0 . 25a 0 + 0 . 5 a t rr 1cm 0 . 6 0 . 1 0 . 2 0 . 8 1 . 0 0 . 4 1 . 0 2 . 0 4 . 0 40 20 100 10 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 byv28-50 - byv28-200 t j =25 pulse width=300 s byv28-600 byv28-300 - byv28-400 t j =25 f=1.0mhz 10 20 40 100 200 400 1000 0.1 0.2 0.4 1 2 4 10 40 100 20 1 . 0 2 . 0 0 single phase half wave 60h z resistive or inductive load 0.375"(9.5mm)lead length 250 3 . 0 4.0 3 . 5 1 . 5 2 . 5 50 100 150 200 byv28-600 byv28-50 - byv28-400 8.3ms single half sine-w ave 1 2 5 10 2 0 50 100 50 60 70 80 90 40 100 www.diode.kr diode semiconductor korea
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